Results for: BSB028N06NN3 G in Discrete Semiconductor Products
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Discrete Semiconductor Products

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench ® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage leve.

FETs - Single

Part No.	DS	Manufacturer	D/C	Qty	Region	Action
BSB028N06NN3G		Infineon	201742+	3407	China	Request A Quote
BSB028N06NN3G		Infineon	-	8302	Hong Kong	Request A Quote
BSB028N06NN3G		Infineon	201742+	3407	Japan	Request A Quote
BSB028N06NN3G		Infineon	-	86	Hong Kong	Request A Quote
BSB028N06NN3G		Infineon	-	4800	China	Request A Quote
BSB028N06NN3G		Infineon	201742+	3407	Hong Kong	Request A Quote

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